摘要 |
A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed, in this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created. |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES;GODET, LUDOVIC;MILLER, TIMOTHY, J.;PAPASOULIOTIS, GEORGE, D.;SINGH, VIKRAM |
发明人 |
GODET, LUDOVIC;MILLER, TIMOTHY, J.;PAPASOULIOTIS, GEORGE, D.;SINGH, VIKRAM |