发明名称 ENHANCED ETCH DEPOSITION PROFILE CONTROL USING PLASMA SHEATH ENGINEERING
摘要 A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed, in this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.
申请公布号 WO2010115114(A2) 申请公布日期 2010.10.07
申请号 WO2010US29799 申请日期 2010.04.02
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES;GODET, LUDOVIC;MILLER, TIMOTHY, J.;PAPASOULIOTIS, GEORGE, D.;SINGH, VIKRAM 发明人 GODET, LUDOVIC;MILLER, TIMOTHY, J.;PAPASOULIOTIS, GEORGE, D.;SINGH, VIKRAM
分类号 H01L21/205;H01L21/3065 主分类号 H01L21/205
代理机构 代理人
主权项
地址