发明名称 Enhanced Etch and Deposition Profile Control Using Plasma Sheath Engineering
摘要 A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.
申请公布号 US2010252531(A1) 申请公布日期 2010.10.07
申请号 US20090645638 申请日期 2009.12.23
申请人 发明人 GODET LUDOVIC;MILLER TIMOTHY;PAPASOULIOTIS GEORGE;SINGH VIKRAM
分类号 B44C1/22;C23C16/513 主分类号 B44C1/22
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