发明名称 |
Capacitive element, manufacturing method of the same, solid-state imaging device, and imaging apparatus |
摘要 |
A capacitive element, includes: an active region parted by an element isolation region formed in a semiconductor substrate; a first electrode formed of a diffusion layer in the active region; an insulating layer formed on the first electrode; and a second electrode formed on a planar surface of the first electrode via the insulating layer, wherein the second electrode is formed within the active region and within the first electrode in a planar layout. |
申请公布号 |
US2010253822(A1) |
申请公布日期 |
2010.10.07 |
申请号 |
US20100661760 |
申请日期 |
2010.03.23 |
申请人 |
SONY CORPORATION |
发明人 |
EBIKO YOSHIKI |
分类号 |
H01L21/02;H01L21/822;H01L27/04;H01L27/146;H01L29/94 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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