发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF |
摘要 |
PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to improve light extraction efficiency by not arranging an electrode on the upper side of a light emitting structure. CONSTITUTION: A semiconductor light emitting device(100) includes a first group and a second group. The first group includes at least n light emitting structures(A1-An) which are connected in series. The second group includes at least n light emitting structures(B1-Bn) which are connected in series. The light emitting structures of the first and second groups are commonly connected to a conductive support member(170). A plurality of semiconductor layers using group III-V compound semiconductors are formed on the light emitting structures of the first and second groups. An active layer(114) is formed under a first conductive semiconductor layer(112). A second conductive semiconductor layer(116) is formed under the active layer. |
申请公布号 |
KR100986570(B1) |
申请公布日期 |
2010.10.07 |
申请号 |
KR20090081112 |
申请日期 |
2009.08.31 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
LEE, SANG YOUL;BAE, JUNG HYEOK;MOON, JI HYUNG;SONG, JUNE O |
分类号 |
H01L33/38 |
主分类号 |
H01L33/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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