| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory device with the characteristic of its resistance variable type memory cell more improved than before. SOLUTION: The nonvolatile memory device includes: a first interconnection 14 embedded in a first groove 13 for interconnection formed on a first interlayer insulating film 10 and extending to an X-direction; a second interlayer insulating film 20 formed on the first interlayer insulating film 10; a second interconnection 27 embedded in a second groove 23 for interconnection formed on the second interlayer insulating film 20 and extending to Y-direction; and a resistance variable type memory cell MC arranged at the position where the first interconnection 14 intersects with the second interconnection 27 so as to be sandwiched between the first interconnection 14 and the second interconnection 27, and including a resistance variable layer 24 and a rectifying layer 25. The dimension within a plane vertical to a thickness direction of the resistance variable type memory cell MC is regulated by the widths of the first and the second interconnection 14, 27. COPYRIGHT: (C)2011,JPO&INPIT |
