| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a resistance-change memory capable of reducing the manufacturing cost and improving the operational characteristics. <P>SOLUTION: This resistance change-memory is equipped with: a bit line BL1 extending in a first direction; bit lines bBL1, bBL2 extending in a second direction; word lines WL1, WL2; a select transistor ST1, in which the control terminal is connected to the word line WL1 and the one end of a current path is connected to the second bit line bBL1; a select transistor ST2, in which the control terminal is connected to the word line WL2, one end of the current path is connected to the bit line bBL2 and the other end of the current path is formed to a common node N1 with the other end of the select transistor ST1; and a resistance change type memory element 10, in which the one end is connected to the bit line BL1 and the other end is connected to the common node N1. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
