| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a diffusion wafer group having a narrow range of variance in resistivity in addition to a high-precision thickness of a non-diffusion layer. SOLUTION: In conventional arts, a range of variance in resistivity in one ingot cannot be grasped, variance in resistivity can be predefined for each ingot and only a thickness of a non-diffusion layer can be predefined. The method of manufacturing the diffusion wafer is provided wherein the thickness of the non-diffusion layer corresponding to resistivity is obtained even in the same ingot. Further, a diffusion wafer group which has more preferable resistivity and thickness of the non-diffusion layer can be provided by combining diffusion wafers obtained from different ingots. COPYRIGHT: (C)2011,JPO&INPIT
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