| 摘要 |
A method of manufacturing a nonvolatile semiconductor memory includes: forming an insulator structure on a semiconductor substrate in a first region; forming a first gate insulating film on the semiconductor substrate outside the first region; blanket depositing a first gate material film and etching-back the first gate material film to form a first gate electrode on the first gate insulating film lateral to the insulator structure; removing the insulator structure; blanket forming a second gate insulating film; blanket depositing a second gate material film and etching-back the second gate material film to form a second gate electrode on the second gate insulating film in the first region; and silicidation of upper surfaces of the first and second gate electrodes. Any one of the first and second gate insulating films is a charge trapping film.
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