| 摘要 |
A method of manufacturing a semiconductor device that includes forming a dummy gate insulating film and a dummy gate electrode on a semiconductor substrate having a channel-forming region. An etching treatment including a first treatment of treating the surface of the exposed surface of the insulating layer with an etching gas containing ammonia and hydrogen fluoride and a second treatment of decomposing and evaporating the product formed in the first treatment are included in removal step of the dummy gate insulating film.
|
