发明名称 METHOD OF MANUFACTURING THIN FILM DEVICE AND THIN FILM DEVICE MANUFACTURED USING THE SAME
摘要 There is provided a method of manufacturing a thin film device and a thin film device manufactured using the same. The method includes forming a sacrificial layer using a first oxide having a perovskite structure on a preliminary substrate; forming an electrode layer using a second oxide having a perovskite structure on the sacrificial layer; forming a thin film laminate on the electrode layer; bonding a permanent substrate onto the thin film laminate; decomposing the sacrificial layer by irradiating a laser onto the preliminary substrate; and separating the preliminary substrate from the electrode layer. During a laser lift-off process, degradation of properties caused by oxygen diffusion can be prevented. Since the electrode layer has thermal conductivity lower than an existing metal electrode, heat emission can be considerably reduced and the sacrificial layer can be easily decomposed by heat accumulation. Therefore, a thin film device having excellent properties can be manufactured.
申请公布号 US2010255344(A1) 申请公布日期 2010.10.07
申请号 US20090545658 申请日期 2009.08.21
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 KIM BOUM SEOCK;OH YONGSOO;KIM SANG JIN;LEE HWAN-SOO
分类号 B32B9/00;H01L21/28 主分类号 B32B9/00
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