发明名称 FLASH MEMORY STORAGE APPARATUS
摘要 A flash memory storage apparatus is provided. The flash memory storage apparatus includes a substrate, a control and storage circuit unit, a ground lead, at least a signal lead, and a power lead. The control and storage circuit unit, the power lead, the signal lead, and the ground lead are disposed on the substrate, in which the power lead, the signal lead, and the ground lead respectively electrically connect to the control and storage circuit unit. Moreover, the flash memory storage apparatus further includes an extra ground lead electrically connected to the ground lead or a protrusion on the substrate, such that the ground lead first electrically connects to a host when the flash memory storage apparatus is plugged into the host.
申请公布号 US2010252931(A1) 申请公布日期 2010.10.07
申请号 US20090472637 申请日期 2009.05.27
申请人 PHISON ELECTRONICS CORP. 发明人 LIN YU-FONG;CHUNG HUNG-YI;LIN YU-TONG;CHEN YUN-CHIEH
分类号 H01L23/48 主分类号 H01L23/48
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