Solar cell has photo-active, semiconducting absorber layer, where alternating adjacent arrangement of electrically insulating passivation areas on back of absorber layer with thickness

摘要

The solar cell has a photo-active, semiconducting absorber layer (03). An alternating adjacent arrangement of electrically insulating passivation areas (04,05) on a back of absorber layer with a thickness. The intrinsic or endowed silicon is provided as material for absorber layer. The silicon nitride with a high positive surface charge and alumina with a high negative surface charge are provided as materials for passivation areas. A metal, particularly aluminum or a transparency conductive oxide, particularly zinc oxide or indium tin oxide is provided as material for contact elements. An independent claim is also included for a manufacturing method for a solar cell.