发明名称 PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a technology for enabling accurate microfabrication by suppressing the LER of a resist without causing a significant increase in dielectric constant and drastic deterioration in insulation properties. SOLUTION: A pattern forming method is configured to process a resist into a prescribed pattern by post-baking after exposure and development. The post-baking includes first post-baking and second post-baking executed after the first post-baking. The temperature of the second post-baking is higher than that of the first post-baking. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010225616(A) 申请公布日期 2010.10.07
申请号 JP20090067942 申请日期 2009.03.19
申请人 CONSORTIUM FOR ADVANCED SEMICONDUCTOR MATERIALS &RELATED TECHNOLOGIES 发明人 TONOKAWA HIROSHI;OGAWA MASAAKI
分类号 H01L21/027;G03F7/40 主分类号 H01L21/027
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