发明名称 METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method and device for manufacturing a semiconductor device, the method uniformly forming a film on a wafer by suppressing a jump phenomenon of the wafer, suppressing degradation of a yield and productivity, and improving reliability of a semiconductor device. SOLUTION: In the method for manufacturing a semiconductor, a wafer w to be subjected to film formation processing is introduced into a reactor; the wafer is supported to be separated from a support member for mounting the wafer w thereon in the film formation processing; the wafer is preliminarily heated while rotating the support member at a predetermined rotational speed with the wafer separated from the support member; the wafer is mounted on the support member; and a process gas is supplied onto the wafer while the wafer is heated at a predetermined temperature and rotated. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010225760(A) 申请公布日期 2010.10.07
申请号 JP20090070108 申请日期 2009.03.23
申请人 NUFLARE TECHNOLOGY INC 发明人 ITO HIDEKI;IKETANI NAOHISA
分类号 H01L21/205;C23C16/46 主分类号 H01L21/205
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