发明名称 |
GROUP-III NITRIDE STRUCTURE AND METHOD FOR PRODUCING A GROUP-III NITRIDE STRUCTURE |
摘要 |
A group-III nitride structure includes a substrate 102 and a fine wall-shaped structure 110 disposed to stand on the substrate 102 in a vertical direction relative to a surface of the substrate 102 and extending in an in-plane direction of the substrate 102. The fine wall-shaped structure 110 contains a group-III nitride semiconductor crystal, and h is larger than d assuming that the height of the fine wall-shaped structure 110 is h and the width of the fine wall-shaped structure 110 in a direction perpendicular to the height direction and the extending direction is d.
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申请公布号 |
US2010252836(A1) |
申请公布日期 |
2010.10.07 |
申请号 |
US20080744648 |
申请日期 |
2008.11.26 |
申请人 |
SOPHIA SCHOOL CORPORATION |
发明人 |
KISHINO KATSUMI;KIKUCHI AKIHIKO |
分类号 |
H01L29/20;H01L21/20;H01L29/06;H01L33/00;H01L33/16;H01L33/20 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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