| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new photoresist suitable for short wavelength imaging, including ≤300 nm and ≤200 nm such as 193 nm and 157 nm. <P>SOLUTION: The photoresists contain a resin with photoacid-labile groups, one or more photoacid generator compounds, and an adhesion-promoting additive compound. The photoresists can exhibit significant adhesion to SiON and other inorganic surface layers. <P>COPYRIGHT: (C)2011,JPO&INPIT |
