| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for driving a semiconductor device, which corrects variations in the threshold value voltage of a transistor and variations in the movability of the transistor. <P>SOLUTION: The method for driving a semiconductor device having a transistor and a capacitive element electrically connected to the gate of the transistor, includes; a first period in which a voltage corresponding to the threshold value voltage of the transistor is held in the capacitive element; a second period in which the sum of a picture signal voltage and the threshold value voltage is held in the capacitive element in which the threshold value voltage has been held; and a third period in which electrical charge held, in the second period, in the capacitive element in accordance with the sum of the picture signal voltage and the threshold value voltage, is discharged via the transistor. <P>COPYRIGHT: (C)2011,JPO&INPIT |
