| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which prevents an outbreak of a chipping or unauthorized cleavage and makes an element separation at a high yield when the semiconductor device having a wurtzite type crystal structure having relatively low Mohs hardness such as a ZnO-based crystal and the like is cut into individual pieces from a wafer state to a chip state. <P>SOLUTION: There is prepared a c plane off substrate which includes the wurtzite type crystal structure, and a crystal c plane which is inclined to a first substrate main face as at least a main face on the minus c plane side at a predetermined angle around an a axis. A semiconductor layer is formed on a second substrate main face as a main face on the plus c plane side of the c plane off substrate. The first substrate main face is scribed along each of first scribe lines along an m axis perpendicular to the a axis. When this takes place, scribing is performed to a direction corresponding to an inclination direction to the first substrate main face of the crystal c plane. The first substrate main face is scribed along each of second scribe lines along the a axis. <P>COPYRIGHT: (C)2011,JPO&INPIT |
