METHOD OF MANUFACTURING SUBSTRATE PRODUCT HAVING NITRIDE BASED COMPOUND SEMICONDUCTOR LAYER ON SUPPORT SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for choosing a substrate suitable for a desired semiconductor device, in a method including a process of sticking heterogeneous substrates in order to manufacture a substrate product having a nitride based compound semiconductor layer on a support substrate.

SOLUTION: A surface layer of a first substrate 10 consisting of a nitride based compound semiconductor, and a surface 20a of a second substrate 20 consisting of a material different from that of the nitride based compound semiconductor are mutually joined. A nitride based compound semiconductor layer 30 is formed on the second substrate 20 by removing other parts, while leaving in the shape of a layer a part containing the surface layer out of the first substrate 10. The second substrate 20 is peeled off from the nitride based compound semiconductor layer 30, after mutually joining a surface 30a of the nitride based compound semiconductor layer 30 to a surface 40a of a support substrate 40 consisting of a material different from both of the nitride based compound semiconductor layer 30 and the second substrate 20.

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