| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a production method of a group III nitride semiconductor substrate, by which a group III nitride semiconductor substrate is obtained without taking labor and time. <P>SOLUTION: The method includes steps of: forming a carbide layer 12 selected from aluminum carbide, titanium carbide, zirconium carbide, hafnium carbide, vanadium carbide and tantalum carbide on a base substrate 10; forming a carbon film 13 as a first film on the carbide layer 12; nitriding the carbide layer 12; epitaxially growing a group III nitride semiconductor layer on the nitrided carbide layer 12; and removing the base substrate 10 from the group III nitride semiconductor layer to obtain a group III nitride semiconductor substrate including the group III nitride semiconductor layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
