| 摘要 |
Includes the steps of preparing a sheet-like current collector 4 having a plurality of bumps 4A on a surface thereof, the plurality of bumps having a height of 3 μm or greater and 10 μm or less; and forming an active material body having a stacked structure on each of the bumps 4A of the current collector 4. The step of forming the active material body includes a first layer vapor deposition step of causing a vaporized vapor deposition material to be incident on the surface of the current collector 4 in a direction inclined with respect to the normal H to the current collector 4 to form a first layer 101a of the active material body on each bump 4A, the first layer 101a being located closest to the current collector; and a second layer vapor deposition step of causing the vaporized vapor deposition material to be incident on the surface of the current collector 4 in a direction inclined, with respect to the normal H to the current collector 4, opposite to the incidence direction of the vapor deposition material in the first layer vapor deposition step to form a second layer 102a on at least a part of the first layer 101a. In the first layer vapor deposition step, vapor deposition is performed while moving the current collector 4 in a direction in which the incidence angle ω of the vapor deposition material with respect to the normal H to the current collector 4 is decreased. |
