发明名称 WIRING STRUCTURE AND METHOD OF FORMING THE SAME
摘要 PURPOSE: A wiring structure and a method for forming the same are provided to reduce the generation of defects during forming processes by forming an additional air gap on the upper sidewall of a conductive pattern. CONSTITUTION: Conductive patterns(114) are formed on a substrate(100). A first interlayer insulating film pattern(102a) is arranged between the conductive patterns. The first interlayer insulating film pattern is spaced apart from the sidewall of the conductive patterns to form a first air gap(116). A second interlayer insulating film pattern(104a) is formed on the first interlayer insulating film. The second interlayer insulating film pattern is spaced apart from the sidewall of the conductive patterns to form a second air gap(118).
申请公布号 KR20100107604(A) 申请公布日期 2010.10.06
申请号 KR20090025748 申请日期 2009.03.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, KYOUNG WOO
分类号 H01L21/28 主分类号 H01L21/28
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