PHOTO DIODE CELL STRUCTURE OF PHOTO DIODE INTEGRATED CIRCUIT FOR OPTICAL PICKUP AND METHOD THEREOF

摘要

PURPOSE: A photo diode cell structure of a photo sensor IC is provided to reduce the size of a photo sensor by narrowly and shallowly doping a high concentration impurity which is an opposite type to light receiving regions. CONSTITUTION: A second type epitaxial layer(203) is located on a first type substrate(201). A plurality of high concentration second type layers are formed on the second type epitaxial layer with a shallow depth. A high concentration first type layer(207) is located on the second type epitaxial layer. The high concentration first type layer is formed between a plurality of high concentration second type layers with a narrow and shallow depth. The width of the high concentration first type layer is less than 1um.