COPPER INTERCONNECT WIRING AND METHOD OF FORMING THEREOF
摘要
Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods of forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion-beam processing. Reduced copper diffusion and improved electromigration lifetime result and the use of selective metal capping techniques and their attendant yield problems are avoided.
申请公布号
EP1815507(A4)
申请公布日期
2010.10.06
申请号
EP20050848887
申请日期
2005.11.08
申请人
TEL EPION INC.
发明人
GEFFKEN, ROBERT, M.;HAUTALA, JOHN, J.;SHERMAN, STEVEN, R.;LEARN, ARTHUR, J.