发明名称 |
Method for fabricating semiconductor device |
摘要 |
A method for fabricating a semiconductor device including: cleaning an apparatus used to grow a layer including Ga; performing a first step of forming a first layer on a substrate made of silicon by using the apparatus, the first layer including a nitride semiconductor that does not include Ga as a composition element and has a Ga impurity concentration of 2 x 10 18 atoms/cm 3 or less; and performing a second step of forming a second layer on the first layer by using the apparatus after the first step is repeatedly carried out multiple times, the second layer including a nitride semiconductor including Ga. |
申请公布号 |
EP2236646(A1) |
申请公布日期 |
2010.10.06 |
申请号 |
EP20100158830 |
申请日期 |
2010.03.31 |
申请人 |
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
发明人 |
MAKABE, ISAO;KOUCHI, TSUYOSHI;NAKATA, KEN |
分类号 |
C23C16/44;H01L21/02;H01L21/20;H01L21/203;H01L21/205 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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