发明名称 HIGH FREQUENCY PLASMA CVD APPARATUS, HIGH FREQUENCY PLASMA CVD METHOD AND SEMICONDUCTOR THIN FILM MANUFACTURING METHOD
摘要 <p>Provided are large area and uniform VHF plasma CVD apparatus and method wherein a plasma generating source constitutes the VHF plasma CVD apparatus for manufacturing a tandem-type thin film silicon solar cell, and influences of standing waves, generation of harmful plasma other than between a pair of electrodes and supply power consumption other than between the pair of electrodes are suppressed. First and second power feed points are arranged on an electrode at positions facing each other. A distance between the power feed points is set at an integral multiple of a half of the wavelength of the using power, and a pulse power separated in terms of time is supplied. The pulse power is outputted from two phase-variable double output high frequency power supplies which can perform pulse modulation. Thus, a first standing wave wherein the anti-node position matches with positions of the first and the second power feed points, and a second standing wave wherein the node position matches with positions of the first and the second power feed points are alternately generated in terms of time.</p>
申请公布号 EP2237310(A1) 申请公布日期 2010.10.06
申请号 EP20080839658 申请日期 2008.09.08
申请人 MURATA, MASAYOSHI 发明人 MURATA, MASAYOSHI
分类号 H01L21/205;C23C16/505 主分类号 H01L21/205
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