| 摘要 |
A method for fabricating a stressed MOS device 30 comprising the steps of: providing a monocrystalline semiconductor substrate 36; creating a stress condition in the monocrystalline semiconductor substrate by epitaxially growing a stress inducing monocrystalline semiconductor material 90 on the monocrystalline semiconductor substrate 36, the stress inducing monocrystalline semiconductor material 90 having a lattice mismatch with the monocrystalline semiconductor substrate 36; and preserving the stress condition in the monocrystalline semiconductor substrate 36 by depositing a film of mechanically hard material 96 on the stress inducing monocrystalline semiconductor material 90 before the stress inducing monocrystalline semiconductor material 90 is subjected to a temperature in excess of about 900°C, wherein the film of mechanically hard material 96 is designed to preserve the stress condition caused by the stress inducing monocrystalline semiconductor material 90 in the monocrystalline semiconductor substrate 36 during subsequent processing.
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