Vertical structure semiconductor light emitting device and method for manufacturing the same

摘要

The invention provides a high-quality vertical semiconductor light emitting device having fewer cracks and a manufacturing method thereof. In the vertical semiconductor light emitting device, an Si-Al alloy substrate is prepared. Then a p-type group III-V compound semiconductor layer is formed on the Si-Al alloy substrate. An active layer is formed on the p-type group III-V compound semiconductor layer. Also, an n-type group III-V compound semiconductor layer is formed on the active layer.