发明名称 VIA STRUCTURE AND VIA ETCHING PROCESS OF FORMING THE SAME
摘要 PURPOSE: A via structure and a via etching method thereof are provided to improve the via side wall coverage for deposition process by implementing the undercut trimming process after the via etching process. CONSTITUTION: A hard mask layer(15) is formed on a semiconductor substrate(10). A photoresist layer(18) is formed on the hard mask layer. A first opening is formed by patterning the photoresist layer. A second opening is formed under the first opening by patterning the hard mask layer. A via is formed to pass through at least a part of the semiconductor substrate.
申请公布号 KR20100108293(A) 申请公布日期 2010.10.06
申请号 KR20100027470 申请日期 2010.03.26
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHANG HUNG PIN;CHIOU WEN CHIH;YU CHEN HUA
分类号 H01L21/3213;H01L21/027;H01L21/306 主分类号 H01L21/3213
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