发明名称 |
VIA STRUCTURE AND VIA ETCHING PROCESS OF FORMING THE SAME |
摘要 |
PURPOSE: A via structure and a via etching method thereof are provided to improve the via side wall coverage for deposition process by implementing the undercut trimming process after the via etching process. CONSTITUTION: A hard mask layer(15) is formed on a semiconductor substrate(10). A photoresist layer(18) is formed on the hard mask layer. A first opening is formed by patterning the photoresist layer. A second opening is formed under the first opening by patterning the hard mask layer. A via is formed to pass through at least a part of the semiconductor substrate. |
申请公布号 |
KR20100108293(A) |
申请公布日期 |
2010.10.06 |
申请号 |
KR20100027470 |
申请日期 |
2010.03.26 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHANG HUNG PIN;CHIOU WEN CHIH;YU CHEN HUA |
分类号 |
H01L21/3213;H01L21/027;H01L21/306 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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