发明名称 LIGHT EMITTING DIODE WITH AIR-GAP AND ITS MANUFACTURE METHOD
摘要 PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to form an air gap through a seed layer on a substrate which includes a concavo-convex part. CONSTITUTION: A substrate includes a plurality of concavo-convex parts. A seed layer is formed on the side and the upper part of the concavo-convex part through a lateral growth process. A semiconductor layer is formed on the seed layer. The semiconductor layer is formed into a cantilever form. An air gap(140) is formed in the lower part of the semiconductor layer.
申请公布号 KR20100108094(A) 申请公布日期 2010.10.06
申请号 KR20090026573 申请日期 2009.03.27
申请人 KOREA PHOTONICS TECHNOLOGY INSTITUTE 发明人 KIM, SANG MOOK;BAEK, JONG HYEOB;LEE, SEUNG JAE
分类号 H01L33/12 主分类号 H01L33/12
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