METHOD FOR FORMING METAL LAYER

摘要

PURPOSE: A metal layer forming method is provided to simplify the control of the thickness of a metal layer which is formed on a substrate by forming a first metal layer on the substrate after executing an exchange reaction process between the ligand of the precursor complex compound and the precursor of a second metal. CONSTITUTION: A substrate is inserted into a deposition chamber. The precursor complex compound of a first metal is adsorbed on the substrate. The precursor gas of a second metal flows into the deposition chamber. The first metal layer is formed on the substrate by executing an exchange reaction process between the ligand of the precursor complex compound and the precursor of a second metal. The rest part except for the layer of the first metal is removed.