METHOD OF FABRICATING NONVOLATILE MEMORY DEVICE HAVING VERTICAL STRUCTURE

摘要

PURPOSE: A method for manufacturing a non-volatile memory device with a vertical structure is provided to obtain the high integrity by three-dimensionally arrange memory cells on the surface of a substrate. CONSTITUTION: Sacrificial films and insulating films(120) are alternatively stacked on a semiconductor substrate(100). The sacrificial films and the insulating films are etched to form a first opening(137) to expose a first part(100a) of the semiconductor substrate. A channel layer(140) is formed on the lower side and the lateral side of the first opening to be in connection with first part. An insulating pillar(150) is formed on the channel layer to bury the first opening. The sacrificial films and the insulating films are etched to form a second opening to expose a second part(100b) of the semiconductor substrate.