PHASE-CHANGEABLE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A phase-change memory device and a method for manufacturing the same are provided to prevent the contact between an epitaxial film and a nitride film by eliminating the nitride film pattern of an exposed element isolating film. CONSTITUTION: An element isolating film(124) buries a trench formed on the upper side of a substrate(100). An active region(125) is defined by the element isolating film. An interlayer insulating film pattern(135) includes an opening. The opening exposes the active region and the element isolating film. A spacer(140) is formed on the sidewall of the opening. A diode is formed in the opening. A phase-change material layer is in electrical connection with the diode.