发明名称 |
RERAM DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p>PURPOSE: A ReRAM device and a manufacturing method thereof are provided to improve the interfacial property and memory property of a ReRAM device by forming a second electrode layer pattern after forming an adhesive patter between the second electrode pattern and a metal oxide layer. CONSTITUTION: A substrate(100) comprises a substrate insulating layer(120) and a substrate body layer(110). A first electrode layer(200) is formed on the substrate. A metal oxide layer(300) is formed on the first electrode layer. A self-assembled monolayer, which includes an aperture pattern exposing the metal oxide layer, is formed on the metal oxide layer. A second electrode layer pattern(500) is formed on the metal oxide layer.</p> |
申请公布号 |
KR20100107905(A) |
申请公布日期 |
2010.10.06 |
申请号 |
KR20090026250 |
申请日期 |
2009.03.27 |
申请人 |
KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION |
发明人 |
LEE, JAE GAB;GO, SEUNG HEE;PARK, HEE JUNG;LEE, CHI YOUNG |
分类号 |
H01L21/8247;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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