发明名称 RERAM DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>PURPOSE: A ReRAM device and a manufacturing method thereof are provided to improve the interfacial property and memory property of a ReRAM device by forming a second electrode layer pattern after forming an adhesive patter between the second electrode pattern and a metal oxide layer. CONSTITUTION: A substrate(100) comprises a substrate insulating layer(120) and a substrate body layer(110). A first electrode layer(200) is formed on the substrate. A metal oxide layer(300) is formed on the first electrode layer. A self-assembled monolayer, which includes an aperture pattern exposing the metal oxide layer, is formed on the metal oxide layer. A second electrode layer pattern(500) is formed on the metal oxide layer.</p>
申请公布号 KR20100107905(A) 申请公布日期 2010.10.06
申请号 KR20090026250 申请日期 2009.03.27
申请人 KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION 发明人 LEE, JAE GAB;GO, SEUNG HEE;PARK, HEE JUNG;LEE, CHI YOUNG
分类号 H01L21/8247;H01L27/115 主分类号 H01L21/8247
代理机构 代理人
主权项
地址