RESISTIVE MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME, AND WRITING METHOD OF THE SAME

摘要

PURPOSE: A resistive memory device, a memory system including the same, and a writing method of the same are provided to reduce a writing time and a reading time by wiring data in the first bit of multi-bit cells. CONSTITUTION: A memory cell array(100) includes a plurality of resistive memory cells for storing data. A row selecting circuit(110) includes a row decoder(X-DECODER) responding a row address(ADDX). A control circuit(500) controls the input-output operation of the data in response with a mode signal(MS). A control signal from the control circuit is divided into a timing control signal and a voltage control signal. The timing control signal is applied to the row selecting circuit, a column decoder(120), and an input-output circuit(400).