发明名称 |
IMAGE SENSOR AND FABRICATING METHOD THEREOF |
摘要 |
<p>PURPOSE: An image sensor and a manufacturing method thereof are provided to prevent the generation of cross-talk by forming a metal wiring which is directly contacted with the different surface of a substrate. CONSTITUTION: A wiring structure is formed on one side(FS) of a substrate(110). The wiring structure comprises a plurality of wirings(124a-124c) and insulating layers(126). A first conductive first well is formed inside the substrate. A first metal wiring(192) is formed in order to be directly contacted with the backside(BS) of the substrate. The first metal wiring applies a first well bias to the first well.</p> |
申请公布号 |
KR20100108109(A) |
申请公布日期 |
2010.10.06 |
申请号 |
KR20090026600 |
申请日期 |
2009.03.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, BYUNG JUN |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|