发明名称 IMAGE SENSOR AND FABRICATING METHOD THEREOF
摘要 <p>PURPOSE: An image sensor and a manufacturing method thereof are provided to prevent the generation of cross-talk by forming a metal wiring which is directly contacted with the different surface of a substrate. CONSTITUTION: A wiring structure is formed on one side(FS) of a substrate(110). The wiring structure comprises a plurality of wirings(124a-124c) and insulating layers(126). A first conductive first well is formed inside the substrate. A first metal wiring(192) is formed in order to be directly contacted with the backside(BS) of the substrate. The first metal wiring applies a first well bias to the first well.</p>
申请公布号 KR20100108109(A) 申请公布日期 2010.10.06
申请号 KR20090026600 申请日期 2009.03.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, BYUNG JUN
分类号 H01L27/146 主分类号 H01L27/146
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