| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor dynamic quantity sensor with suppressed leakage current and has a high reliability. <P>SOLUTION: A beam structure is arranged at a position which is separated by a predetermined spacing on a top face of a substrate 1 and has a movable electrode. The fixed electrodes 9a-9d, 11a-11d are arranged facing a side face of the movable electrode. On the top face part of the substrate 1, a laminate, consisting of a lower side insulator film a conductive film and an upper side insulator film, is arranged. A circuit pattern 22 of the fixed electrode is formed by the conductive film. The circuit pattern 22 and the fixed electrodes 9a, 9b, 11c, and 11d are connected electrically through an aperture part 30 and an anchor part 28a of the fixed electrode. The lower electrode and the beam structured body are connected electrically through the aperture part of the upper side insulator film and the anchor part of the beam structure. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
