发明名称 PROCESSING SYSTEM FOR FABRICATING COMPOUND NITRIDE SEMICONDUCTOR DEVICES
摘要 <p>One embodiment of a processing system for fabricating compound nitride semiconductor devices comprises one or more processing chamber operable with form a compound nitride semiconductor layer on a substrate, a transfer chamber coupled with the processing chamber, a loadlock chamber coupled with the transfer chamber, and a load station coupled with the loadlock chamber, wherein the load station comprises a conveyor tray movable to convey a carrier plate loaded with one or more substrates into the loadlock chamber. Compared to a single chamber reactor, the multi-chamber processing system expands the potential complexity and variety of compound structures. Additionally, the system can achieve higher quality and yield by specialization of individual chambers for specific epitaxial growth processes. Throughput is increased by simultaneous processing in multiple chambers.</p>
申请公布号 KR20100108450(A) 申请公布日期 2010.10.06
申请号 KR20107019422 申请日期 2009.01.13
申请人 APPLIED MATERIALS, INC. 发明人 BURROWS BRIAN H.;WASHINGTON LORI D.;STEVENS RONALD;CHOI KENRIC T.;WHITE ANTHONY F.;ANDERSON ROGER N.;NIJHAWAN SANDEEP;PODESTA JOSHUA J.;TAM ALEXANDER
分类号 H01L21/677;H01L21/20;H01L21/205 主分类号 H01L21/677
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