METHOD OF FORMING INFORMATION-STORING PATTERN

摘要

PURPOSE: A formation method of an information storage pattern is provided to improve the electrical property of a phase variation memory device by uniformly maintaining the resistance value of a memory cell. CONSTITUTION: A semiconductor substrate(10) comprises an active layer(20). An interlayer insulating layer(30) is formed on the semiconductor substrate. The interlayer insulating layer comprises an opening(35) which exposes a transistor or a diode. A bottom electrode(40) is formed in the opening of the interlayer insulating layer. The bottom electrode is formed in order to partly fill the opening of the interlayer insulating layer.