| 发明名称 |
THIN FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE THIN FILM |
| 摘要 |
<p>Disclosed is a thin film which is used in the production process of a semiconductor device. The thin film contains germanium, silicon, nitrogen and hydrogen.</p> |
| 申请公布号 |
KR20100108419(A) |
申请公布日期 |
2010.10.06 |
| 申请号 |
KR20107017262 |
申请日期 |
2009.02.12 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KATO YOSHIHIRO;FUKIAGE NORIAKI |
| 分类号 |
H01L21/336;H01L21/316;H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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