| 摘要 |
<p>PURPOSE: A semiconductor device and a photomask for manufacturing the same are provided to prevent a short between a large pattern and a small pattern by removing an etching defect due to interference between the small pattern and the large pattern in a lithography process. CONSTITUTION: A semiconductor device includes a first pattern(410_1) and a second pattern(410_2). The second pattern is separated from the first pattern with a regular space(S1). The second pattern includes at least one slot(410_2A) in an opposite position to the first pattern. The second pattern is wider than the first pattern. The second pattern surrounds the first pattern. The outer surface of the first pattern faces the inner surface of the second pattern. The slot is formed on the inner surface of the second pattern.</p> |
