RECESS CHANNEL TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A recessed channel transistor and a manufacturing method thereof are provided to improve an operation current property of a cell transistor by thinly forming a gate insulation layer on a channel region under a trench. CONSTITUTION: A device isolation layer(12) defines an active area on a semiconductor substrate(10). A trench(28) crosses the active area on the semiconductor substrate. A gate insulation layer(44) covers the upper side of the semiconductor substrate in contact with the trench. A gate electrode(46) fills the trench with the gate insulation layer.