| 摘要 |
<p>PURPOSE: A semiconductor device is provided to increase an active area by forming a dummy area between the active area and a device isolation film. CONSTITUTION: A semiconductor device is formed on a substrate and includes a device isolation layer and a dummy area between the device isolation layer and the active area. The device isolation layer defines the active area. A source(210) is formed on the inner sides of the active area and the dummy area. A drain(212) is separated from the source and is formed on the inner side of the active area and the dummy area. A gate(208) is formed on the upper side of the active area to cross the source and the drain. The active area is overlapped with the gate. The source and the drain are connected to an upper wiring through a via contact(214).</p> |
