发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A nonvolatile semiconductor memory is provided to reduce a process time of writing a page by simultaneously writing data and waiting for writing next data. CONSTITUTION: A memory core(100) is comprised of an plurality of banks which are arranged in 3D type. Input buffers(110,120) receive control pin information and an I/O information. An address buffer(140) maintains an address which is supplied from the input buffers. An data buffer(150) maintains input data which are supplied from the input buffers. An output buffer(160) outputs data to the outside. An array control unit(190a) controls a memory core.
申请公布号 KR20100106211(A) 申请公布日期 2010.10.01
申请号 KR20100019734 申请日期 2010.03.05
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TOKIWA NAOYA;MAEJIMA HIROSHI
分类号 G11C13/00;G11C16/34;H01L27/10 主分类号 G11C13/00
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