SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A semiconductor memory device is provided to reduce foaming voltage by setting the ratio of manganese oxide over 55%. CONSTITUTION: A nonvolatile memory comprises a memory cell array(1) having memory cell in a matrix shape. A column control circuit(2) is formed into a bit line direction and is adjacent to the memory cell array. A row control circuit(3) is formed into a word line direction is adjacent to the memory cell array. A data I/O buffer(4) is connected to an external host through an I/O wire. Addresses applied to the data I/O buffer is transmitted to the column control circuit and the low control circuit through an address resistor(5). A command supplied to a data I / O buffer is transmitted to a command interface(6).