| 摘要 |
PURPOSE: A semiconductor memory device is provided to easily secure the expandability of a redundancy circuit since a circuit related to a redundancy word line does not increase even though the number of the redundancy word line increase. CONSTITUTION: A common control signal generating unit(310) generates a word line control signal(WLOFF) and a low enable signal(XDECEN). A redundancy selection signal generation unit(320) generates a plurality of redundancy word line selection signals(RWLEN<0>,RWLEN<1>). The redundancy selection signal generation unit includes a first logic combination unit for performing NAND operation of a first test signal and a first internal address. A plurality of redundancy word line drivers(330,340) drives the redundancy word line which is selected by the redundancy word line selection signal. |
