发明名称 NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
摘要 PURPOSE: A nonvolatile memory device and a memory system including the same are provided to perform an interleaving program and deinterleaving reading by storing program data according the reading period and writing period of the nonvolatile memory device. CONSTITUTION: A memory cell array(210) is connected to read/write circuit(230) through a bit line(BL). An address decoder(220) is connected to the memory cell array through a word line(WL). A reading/ writing circuit is connected to the storing circuit(240) through the data line(DL). The storing circuit is connected to the reading/ writing circuit through the data lines. The storing circuit operates in response to the control of a control logic(250).
申请公布号 KR20100106142(A) 申请公布日期 2010.10.01
申请号 KR20090024628 申请日期 2009.03.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, YONG JUNE;KIM, JAE HONG;KONG, JUN JIN
分类号 G11C16/10;G11C16/02;G11C16/06 主分类号 G11C16/10
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