| 摘要 |
The present invention is to provide a silicon nitride film forming apparatus and a forming method which makes possible the high reproducibility of film quality or film thickness. The silicon nitride film forming apparatus and forming method in which a heating element (4) and a substrate (7) are arranged in a vacuum vessel (1) connected to a gas exhaust system (2) and a gas supply system (8) to deposit a silicon nitride film on the substrate surface by maintaining the heating element at a predetermined temperature and by decomposing and/or activating a raw material gas supplied from the gas supply system, comprises: an inner wall (9) which is arranged in the vacuum vessel surrounding the heating element and the substrate so as to form a film formation space, a gas introduction means to introduce the raw material gas to the film forming space, and at least one of a heating means (11) and a cooling means (12) of the inner wall arranged to control the inner wall to a predetermined temperature. <IMAGE> |
