| 摘要 |
PROBLEM TO BE SOLVED: To improve positioning precision of a well contact hole with respect to an element isolation part. SOLUTION: A method of manufacturing a semiconductor device includes a first process of forming a well region 2 on a semiconductor substrate, a second process of forming a first alignment mark on the semiconductor substrate and the element isolation part 7 for isolating an active region in the well region 2, a third process of forming a second alignment mark and a gate electrode 9 of a MOS transistor on the semiconductor substrate, a fourth process of forming a semiconductor region to serve as a source electrode or a drain electrode together with the gate electrode 9, a fifth process of forming an insulating film 14 on the semiconductor substrate and the gate electrode 9, a sixth process of forming the well contact hole at a position predetermined based upon the first alignment mark, and a seventh process of forming a contact hole penetrating the insulating film 14 at a position predetermined based upon the second alignment mark. COPYRIGHT: (C)2010,JPO&INPIT
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