| 摘要 |
A dual triggered silicon controlled rectifier (DTSCR) comprises: a semiconductor substrate; an N-well, a P-well, a first N+ diffusion region and a first P+ diffusion region, a second N+ diffusion region and a second P+ diffusion region, a third P+ diffusion region, positioned in one side of the DTSCR and across the N-well and the P-well; a third N+ diffusion region, positioned in another side of the DTSCR and across the N-well and the P-well; a first gate, positioned above the N-well between the second P+ diffusion region and the third P+ diffusion region, for use as a P-type trigger node to receive a first trigger current or a first trigger voltage; and a second gate, positioned above the P-well between the first N+ diffusion region and the third N+ diffusion region, for use as an N-type trigger node to receive a second trigger current or a second trigger voltage.
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